发明名称 Nano deposition and ablation for the repair and fabrication of integrated circuits
摘要 An apparatus for and methods of repairing and manufacturing integrated circuits using the apparatus. The apparatus, comprising: a vacuum chamber containing: a movable stage configured to hold a substrate; an inspection and analysis probe; a heat source; a gas injector; and a gas manifold connecting multiple gas sources to the gas injector.
申请公布号 US9583401(B2) 申请公布日期 2017.02.28
申请号 US201414179099 申请日期 2014.02.12
申请人 International Business Machines Corporation 发明人 Adderly Shawn A.;Gambino Jeffrey P.;Joseph Eric A.;Speranza Anthony C.
分类号 G01L21/30;G01R31/00;H01L21/66;H01L21/768;H01J37/32;H05H1/24;C23C16/04;C23C16/513;G01N23/225 主分类号 G01L21/30
代理机构 Schmeiser, Olsen & Watts 代理人 Schmeiser, Olsen & Watts ;Meyers Steven
主权项 1. A method, comprising: (a) providing an apparatus including: a vacuum chamber containing a movable stage configured to hold a substrate, an inspection and analysis probe, a heat source, a gas injector and a gas manifold, said gas manifold connecting multiple gas sources to said gas injector; (b) loading a substrate onto said movable stage; (c) scanning said substrate for defects using said inspection and analysis probe; (d) if a defect is found determining if it is (i) a short or extension between wires, (ii) an open or notch in a wire, or (iii) a void in a dielectric layer between said wires; determining a chemical composition of said defect;selecting a gas from said multiple gas sources for repairing said defect;if said defect is a short or extension between wires either laser abating or plasma etching said defect using said selected gas;if said defect is an open or notch in a wire, depositing a conductive material to repair said defect using said selected gas; andif said defect is a void in a dielectric layer between wires, depositing a dielectric material to repair said defect using said selected gas; and (e) repeating steps (c) and (d) until no defects are found.
地址 Armonk NY US