发明名称 |
Wire grid polarizer and method for fabricating the same |
摘要 |
A method for fabricating a wire grid polarizer according to an embodiment comprises: forming a conductive layer on a substrate; forming a guide layer on the conductive layer; forming a hard mask pattern to partially expose the guide layer; forming a guide pattern to partially expose the conductive layer; providing a block copolymer of two monomers having different etching rates; forming two sets of monomer blocks by aligning the block copolymer; selectively removing one set of monomer blocks; and forming a conductive wire pattern using the remaining set of monomer blocks and the guide pattern as etching masks. A width of an upper end of the guide pattern adjacent to the hard mask pattern is smaller than a width of a lower end adjacent to the conductive layer. The width of the upper end of the guide pattern is smaller than a width of the hard mask pattern. |
申请公布号 |
US9581745(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201514667437 |
申请日期 |
2015.03.24 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Xie Lei;Kim Tae Woo;Yoon Dae Ho;Lee Moon Gyu |
分类号 |
G02B5/30 |
主分类号 |
G02B5/30 |
代理机构 |
Innovation Counsel LLP |
代理人 |
Innovation Counsel LLP |
主权项 |
1. A method for fabricating a wire grid polarizer, the method comprising:
forming a conductive layer on a substrate; forming a guide layer on the conductive layer; forming a hard mask pattern on the guide layer to partially expose the guide layer; forming a guide pattern to partially expose the conductive layer by patterning the guide layer using the hard mask pattern as an etching mask; providing a block copolymer of two monomers having different etching rates in a space defined by the conductive layer and the guide pattern; forming two sets of monomer blocks by aligning the block copolymer of two monomers; selectively removing one set of the two sets of monomer blocks; and forming a conductive wire pattern by patterning the conductive layer using the remaining set of monomer blocks and the guide pattern as etching masks, wherein a width of an upper end of the guide pattern adjacent to the hard mask pattern is smaller than a width of a lower end of the guide pattern adjacent to the conductive layer, and the width of the upper end of the guide pattern is smaller than a width of the hard mask pattern. |
地址 |
KR |