Method for operating semiconductor manufacturing equipment

摘要

A method for operating semiconductor manufacturing equipment is provided. The method includes forming a conductive thin film on an inner side surface of a reaction chamber and on a substrate in the reaction chamber, the conductive thin film including a first conductive material, and forming a particle preventive layer on the inner side surface of the reaction chamber in which the conductive thin film is formed.

主权项

1. A production method for semiconductor device manufacturing, the method comprising:
running deposition processes a number of times n, wherein n is a natural number equal to two or more, and each of the deposition processes includes: loading a substrate into a reaction chamber of semiconductor device manufacturing equipment, forming an electrically conductive thin film on an inner side surface of the reaction chamber and on the substrate in the reaction chamber, and subsequently removing the substrate from the reaction chamber; running a respective particle preventing process after at least one of the deposition processes, each said respective particle preventing process comprising forming a particle preventive layer on the inner side surface of the reaction chamber such that the particle preventive layer covers at least one conductive thin film formed on the inner side surface of the reaction chamber by the deposition process or processes; subsequently shutting down the semiconductor device manufacturing equipment, thereby creating downtime of the equipment; and overhauling the semiconductor device manufacturing equipment during the downtime, and wherein the running of at least one respective particle preventing process comprises running a particle preventing process of forming a particle preventive layer only after the predetermined number n deposition processes have been run, wherein n is a natural number that is equal to or greater than 2, such that respective ones of the electrically conductive thin films are built up one directly on another on the side surface of the reaction chamber before the particle preventive layer is formed thereover.