Integrated circuit module having a first die with a power amplifier stacked with a second die and method of making the same

摘要

Disclosed is an integrated circuit module that includes a first die having a plurality of hot regions and at least one cool region when operating under normal conditions. The first die with a top surface includes at least one power amplifier that resides in the plurality of hot regions. The integrated circuit module also includes a second die. The second die has a bottom surface, which is adhered to the top surface of the first die, wherein any portion of the bottom surface of the second die that is adhered to the top surface of the first die resides exclusively on the at least one cool region. In at least one embodiment, the first die is an RF power amplifier die and the second die is a controller die having control circuitry configured to control the at least one power amplifier that is an RF power amplifier type.

主权项

1. An integrated circuit module comprising:
an RF power amplifier die having a plurality of hot regions and at least one cool region when operating under normal conditions, the RF power amplifier die having at least one RF power amplifier that resides in the plurality of hot regions and a top surface; and a controller die having control circuitry configured to control the at least one RF power amplifier and a bottom surface, which is adhered to the top surface of the RF power amplifier die with non-conductive adhesive, wherein any portion of the bottom surface of the controller die that is adhered to the top surface of the RF power amplifier die resides exclusively on the at least one cool region.