Interconnect structure and method of forming same

摘要

A method comprises depositing a first dielectric layer over a substrate, forming a first metal line and a second metal line in the first dielectric layer, wherein the first metal line and the second metal line are separated from each other by a width approximately equal to a width of the first metal line, applying an etching process to the first metal line and the second metal line to form a first trench and a second trench, depositing a liner layer over the first dielectric layer and forming a via over the first metal line, wherein a bottom of the via is in direct contact with a top surface of the first metal line and the bottom of the via is conformal to the first trench.

主权项

1. A method comprising:
depositing a first dielectric layer over a substrate; forming a first conductive structure and a second conductive structure in the first dielectric layer, wherein a top surface of the first conductive structure and a top surface of the second conductive structure are exposed outside the first dielectric layer; recessing the first conductive structure and the second conductive structure to form a first trench and a second trench, wherein a bottom portion of a sidewall of the first trench is formed of a dielectric material; depositing a liner layer over the first dielectric layer; depositing a second dielectric layer over the liner layer; and forming a third conductive structure in the second dielectric layer, wherein:
a bottom of a first portion of the third conductive structure is a planar surface and is in direct contact with the top surface of the first conductive structure, and wherein a rightmost edge of the bottom of the first portion is vertically aligned with a rightmost edge of the first conductive structure; anda bottom of a second portion of the third conductive structure is a slope surface and is in direct contact with the first dielectric layer, and wherein a leftmost edge of the bottom of the second portion is vertically aligned with the rightmost edge of the first conductive structure.