Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes a stacked structure including conductive layers and insulating layers stacked alternately with each other, first semiconductor patterns passing through the stacked structure and arranged in a first direction, second semiconductor patterns passing through the stacked structure and arranged in the first direction, wherein the second semiconductor patterns are adjacent to the first semiconductor patterns in a second direction crossing the first direction, air gaps located between the first semiconductor patterns and the second semiconductor patterns and extending in the first direction, and at least one blocking pattern passing through the stacked structure and filling portions of the air gaps.

主权项

1. A semiconductor device, comprising:
a stacked structure including conductive layers and insulating layers stacked alternately with each other; first semiconductor patterns arranged in a first direction and each of the first semiconductor patterns passes through the stacked structure in a stacking direction; second semiconductor patterns arranged in the first direction and adjacent to the first semiconductor patterns in a second direction crossing the first direction, wherein each of the second semiconductor patterns passes through the stacked structure in the stacking direction; wherein the conductive layers include air gaps between the first semiconductor patterns and the second semiconductor patterns, respectively, so that the air gaps and the insulating layers are alternately stacked between tire first semiconductor patterns and the second semiconductor patterns at least one blocking pattern passing through the stacked structure in the stacking direction and filling at least portions of the air gaps; and a slit insulating layer located between the first semiconductor patterns and the second semiconductor patterns and having substantially the same height as the at least one blocking pattern.