Lateral electrochemical etching of III-nitride materials for microfabrication

摘要

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

主权项

1. A method for laterally etching III-nitride material, the method comprising:
depositing a first layer of III-nitride material having a first n-type conductivity on a substrate; depositing a second layer of material over the first layer; forming a via in the second layer to expose a surface area of the first layer; electrochemically and laterally etching the first layer using a hydrofluoric-based etchant to selectively remove at least a portion of the first layer, wherein the removed portion of the first layer extends under the second layer and wherein the etching does not require illumination.