| 发明名称 | Semiconductor switch | ||
| 摘要 | A semiconductor switch is configured to conduct or cutoff a signal path from its first terminal to its second terminal. An enhancement-type first transistor is arranged between the first terminal and the second terminal. A first bias circuit is connected to apply a gate voltage VG that corresponds to a control signal VCNT to the gate of the first transistor when the power supply voltages VDD and VSS are supplied. A second bias circuit is connected such that a voltage that corresponds to the lower voltage of the voltages at the first terminal and the second terminal is applied to the gate of the first transistor when the power supply voltages VDD and VSS are not supplied. | ||
| 申请公布号 | US9584114(B2) | 申请公布日期 | 2017.02.28 |
| 申请号 | US201514729055 | 申请日期 | 2015.06.03 |
| 申请人 | ADVANTEST CORPORATION | 发明人 | Hata Yoshiyuki;Sato Taku;Takikawa Masahiko |
| 分类号 | H03B1/00;H03K3/00;H03K17/687;H03K17/18 | 主分类号 | H03B1/00 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP |
| 主权项 | 1. A semiconductor switch having its first terminal and its second terminal, and configured to conduct or cutoff a signal path from its first terminal to its second terminal, the semiconductor switch comprising: an enhancement-type first transistor arranged between the first terminal and the second terminal; a first bias circuit connected to apply a gate voltage that corresponds to a control signal to a gate of the first transistor when a power supply voltage is supplied; and a second bias circuit connected to apply, to the gate of the first transistor, a voltage that corresponds to a lower voltage selected from among voltages at the first terminal and the second terminal, in a no-power-supply state in which the power supply voltage is not supplied. | ||
| 地址 | JP | ||