Semiconductor device

摘要

A semiconductor device capable of maintaining data even after instantaneous power reduction or interruption. The semiconductor device includes first to sixth transistors. The first and fourth transistors are p-channel transistors. The second and fifth transistors are n-channel transistors. In the third and sixth transistors, a channel formation region is included in an oxide semiconductor layer. A high voltage is applied to one of a source and a drain of the first transistor and one of a source and a drain of the fourth transistor. A low voltage is applied to one of a source and a drain of the second transistor and one of a source and a drain of the fifth transistor.

主权项

1. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor, wherein: each of the first transistor and the fourth transistor is a p-channel transistor, each of the second transistor and the fifth transistor is an n-channel transistor, each of the third transistor and the sixth transistor is a transistor including an oxide semiconductor comprising a channel formation region, a source of the first transistor and a source of the fourth transistor are configured to be supplied with a high voltage, a source of the second transistor and a source of the fifth transistor are configured to be supplied with a low voltage, a drain of the first transistor is directly connected to a drain of the second transistor and a source of the third transistor, a drain of the third transistor is directly connected to a gate of the fourth transistor and a gate of the fifth transistor, a drain of the fourth transistor is directly connected to a drain of the fifth transistor and a source of the sixth transistor, and a drain of the sixth transistor is directly connected to a gate of the first transistor and a gate of the second transistor.