发明名称 Vapor deposition mask, and manufacturing method and manufacturing device for organic EL element using vapor deposition mask
摘要 A vapor deposition mask (70) includes a first layer (71), a second layer (72) and a third layer (73) in this order. A plurality of first openings (71h), a plurality of second openings (72h) and a plurality of third openings (73h) are formed respectively in the first layer, the second layer and the third layer. The first openings, the second openings and the third openings communicate with each other, thereby constituting mask openings (75). The opening dimension of the second openings is larger than the opening dimension of the first openings and is larger than the opening dimension of the third openings. With this configuration, it is possible to prevent reduction of the opening dimension of the mask openings or clogging of the mask openings due to the vapor deposition particles adhering to the mask openings.
申请公布号 US9580791(B2) 申请公布日期 2017.02.28
申请号 US201113697164 申请日期 2011.04.26
申请人 Sharp Kabushiki Kaisha 发明人 Inoue Satoshi;Kawato Shinichi;Hayashi Nobuhiro;Sonoda Tohru
分类号 C23C16/04;H05B33/10;C23C14/04;B05C21/00;H01L51/00;H01L51/50 主分类号 C23C16/04
代理机构 Morrison & Foerster LLP 代理人 Morrison & Foerster LLP
主权项 1. A vapor deposition mask for forming a coating film having a predetermined pattern on a substrate by causing vapor deposition particles to adhere to the substrate, wherein a plurality of mask openings through which the vapor deposition particles pass are formed in the vapor deposition mask, a relative position between a vapor deposition source that discharges the vapor deposition particles and the vapor deposition mask is constant, and the mask openings overlap the vapor deposition source directly above the vapor deposition source, the vapor deposition mask includes a first layer, a second layer and a third layer in this order from a side of the substrate, a plurality of first openings, a plurality of second openings and a plurality of third openings are formed respectively in the first layer, the second layer and the third layer, the first openings, the second openings and the third openings are configured to communicate with each other, thereby constituting the mask openings, an opening dimension of the second openings is larger than an opening dimension of the first openings and is larger than an opening dimension of the third openings, the opening dimension of the first openings is larger than the opening dimension of the third openings, and the first layer and the third layer of the vapor deposition mask are made of polyimide.
地址 Osaka JP