| 发明名称 | Light-emitting diode having a roughened surface | ||
| 摘要 | A method of manufacturing a light-emitting diode comprises the steps of providing a substrate comprising an upper surface and a bottom surface opposite to the upper surface; providing a semiconductor stack layer on the upper surface, wherein the semiconductor stack layer comprises a first type semiconductor layer having a first surface, a light-emitting layer on the first type semiconductor layer for emitting light, and a second type semiconductor layer on the light-emitting layer; treating the first surface to form a second surface, wherein the second surface is flatter than the first surface; and providing a laser beam through the second surface to cut the substrate. | ||
| 申请公布号 | US9583677(B2) | 申请公布日期 | 2017.02.28 |
| 申请号 | US201514690910 | 申请日期 | 2015.04.20 |
| 申请人 | EPISTAR CORPORATION | 发明人 | Chi Liang-Sheng;Chen Pei-Chia;Chen Chih-Hao |
| 分类号 | H01L33/20;H01L33/22;H01L33/32;H01L33/00;H01L33/46;H01L27/15 | 主分类号 | H01L33/20 |
| 代理机构 | Ditthavong & Steiner, P.C. | 代理人 | Ditthavong & Steiner, P.C. |
| 主权项 | 1. A method of manufacturing a light-emitting diode, comprising the steps of: providing a substrate comprising an upper surface and a bottom surface opposite to the upper surface; providing a semiconductor stack on the upper surface, wherein the semiconductor stack comprises a first type semiconductor layer having a first portion and a second portion, a light-emitting layer on the first portion of the first type semiconductor layer for emitting light, and a second type semiconductor layer on the light-emitting layer, wherein the second portion comprises a first surface; treating the second portion to form a second surface, wherein the second surface is flatter than the first surface; and providing a laser beam through the second surface to cut the substrate. | ||
| 地址 | Hsinchu TW | ||