Reduction of defect induced leakage in III-V semiconductor devices

摘要

A semiconductor device includes a semiconductor substrate and a p-doped layer formed on the substrate having a dislocation density exceeding 108 cm−2. An n-type layer is formed on or in the p-doped layer. The n-type layer includes a II-VI material configured to tolerate the dislocation density to form an electronic device with reduced leakage current over a device with a III-V n-type layer.

主权项

1. A method for forming a semiconductor device, comprising:
providing a p-doped layer including a doped III-V material on a Si substrate wherein lattice mismatch between the III-V material and the Si substrate provides a dislocation density exceeding 108 cm−2; and reducing leakage current in the device by forming an n-type layer including ZnO on or in the p-doped layer such that the n-type layer can tolerate the dislocation density to form an electronic device where the leakage current is less than that of a device with a III-V n-type layer.