Semiconductor constructions having through-substrate interconnects

摘要

Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect.

主权项

1. A semiconductor construction comprising:
a semiconductor substrate, wherein the semiconductor substrate comprises;
a first side;a second side in opposing relation to the first side;a first opening extending from the first side to define a first sidewall surface elongated from the first side and a first bottom surface elongated from the first sidewall surface;a second opening extending from the second side to define a second sidewall surface elongated from the second side and a second bottom surface elongated from the second sidewall surface;wherein the first bottom surface includes a first portion that merges with the second bottom surface and a second portion that is free from merging with the second bottom surface; and a through-substrate interconnect; wherein the through-substrate interconnect comprises:
a first part formed in the first opening; anda second part formed in the second opening;wherein the first part is in electrical contact with the second part at the first portion of the first bottom surface of the first opening; wherein the first part of the through-substrate interconnect comprises:
a first conductive barrier lining along the first sidewall surface of the first opening and elongating to cover at least the second portion of the first bottom surface; anda first conductive core formed on the first conductive barrier lining to substantially completely fill the first opening; and wherein the second part of the through-substrate interconnect comprises:
a second conductive barrier lining along the second sidewall surface of the second opening and elongating to cover the second bottom surface; anda second conductive core formed on the second conductive barrier lining to substantially completely fill the second opening.