| 发明名称 | Contact resistance reduction | ||
| 摘要 | An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a floating diffusion disposed in the semiconductor material adjacent to a photodiode in the plurality of photodiodes. A transfer gate is disposed to transfer image charge generated in the photodiode into the floating diffusion. A first electrical contact with a first cross sectional area is coupled to the transfer gate. A second electrical contact with a second cross sectional area is coupled to the floating diffusion, and the second cross sectional area is greater than the first cross sectional area. The image sensor also includes pixel transistor region disposed in the semiconductor material including a first electrical connection to the semiconductor material. A third electrical contact with a third cross sectional area is coupled to the first electrical connection to the semiconductor material, and the third cross sectional area is greater than the first cross sectional area. | ||
| 申请公布号 | US9583527(B1) | 申请公布日期 | 2017.02.28 |
| 申请号 | US201615009526 | 申请日期 | 2016.01.28 |
| 申请人 | OmniVision Technologies, Inc. | 发明人 | Leung Kevin Ka Kei;Tai Hsin-Neng;Weng Hung-Ming |
| 分类号 | H01L27/146 | 主分类号 | H01L27/146 |
| 代理机构 | Blakely Sokoloff Taylor & Zafman LLP | 代理人 | Blakely Sokoloff Taylor & Zafman LLP |
| 主权项 | 1. An image sensor, comprising: a plurality of photodiodes disposed in a semiconductor material; a floating diffusion disposed in the semiconductor material proximate to a photodiode in the plurality of photodiodes; a transfer gate disposed to transfer image charge generated in the photodiode into the floating diffusion; a first electrical contact with a first cross sectional area, wherein the first electrical contact is coupled to the transfer gate; a second electrical contact with a second cross sectional area, wherein the second electrical contact is coupled to the floating diffusion, and wherein the second cross sectional area is greater than the first cross sectional area; a pixel transistor region disposed in the semiconductor material including a first electrical connection to the semiconductor material; and a third electrical contact with a third cross sectional area, wherein the third electrical contact is coupled to the first electrical connection to the semiconductor material, and wherein the third cross sectional area is greater than the first cross sectional area. | ||
| 地址 | Santa Clara CA US | ||