Nitride semiconductor device and method for manufacturing nitride semiconductor device

摘要

A nitride semiconductor device of the present invention has a source-electrode-side insulator protection film layer disposed between a source electrode and a drain electrode on a second nitride semiconductor layer and formed at least partially covering the source electrode, a drain-electrode-side insulator protection film layer disposed separately from the source-electrode-side insulator protection film layer and formed at least partially covering the drain electrode, and a gate layer formed in contact with the second nitride semiconductor layer between the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and made of a p-type metal oxide semiconductor, and the gate layer has regions opposite to the second nitride semiconductor layer across each of the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and a region in contact with the second nitride semiconductor layer.

主权项

1. A nitride semiconductor device comprising:
a substrate; a nitride buffer layer formed on the substrate; a first nitride semiconductor layer formed on the nitride buffer layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and made of a material having a band gap larger than the first nitride semiconductor layer; a source electrode formed on the second nitride semiconductor layer; a drain electrode formed on the second nitride semiconductor layer and formed separately from the source electrode; an insulator protection film layer that includes a source-electrode-side insulator protection film layer and a drain-electrode-side insulator protection film layer, the source-electrode-side insulator protection film layer being disposed between the source electrode and the drain electrode on the second nitride semiconductor layer and formed at least partially covering the source electrode, and the drain-electrode-side insulator protection film layer being disposed separately from the source-electrode-side insulator protection film layer on the second nitride semiconductor layer and formed at least partially covering the drain electrode; a gate layer formed between the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer to be in contact with the second nitride semiconductor layer, the gate layer being made of a p-type metal oxide semiconductor; a gate electrode formed entirely covering the gate layer and at least partially covering the insulator protection film layers, and a water repellent film layer formed in an interface between the insulator protection film layer and the gate electrode, the gate layer including regions opposite to the second nitride semiconductor layer across each of the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and a region in contact with the second nitride semiconductor layer, wherein the insulator protection film layer comprises an oxide insulator protection film layer formed on a nitride insulator protection film layer, the insulator protection film being equal to or greater than 10 nm and equal to or less than 200 nm in thickness, the oxide insulator protection film layer being equal to or greater than 1 nm and equal to or less than 50 nm in thickness, and the water repellent film layer is formed by a fluorocarbon chain or a hydrocarbon chain, the fluorocarbon chain including CF3(CF2)7C2H4SiCl, the hydrocarbon chain including CH3(CH2)1 7SiCl3.