| 发明名称 | Hardmask composition and method of forming pattern by using the hardmask composition | ||
| 摘要 | A hardmask composition may include a solvent and a 2-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen or a 2-dimensional carbon nanostructure precursor thereof. A content of oxygen in the 2-dimensional carbon nanostructure precursor may be lower than about 0.01 atom % or greater than about 40 atom %. The hardmask composition may be used to form a fine pattern. | ||
| 申请公布号 | US9583358(B2) | 申请公布日期 | 2017.02.28 |
| 申请号 | US201514725390 | 申请日期 | 2015.05.29 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kim Sangwon;Shin Hyeonjin;Park Seongjun |
| 分类号 | H01L21/308;H01L21/324;H01L21/02;H01L21/311;H01L21/3213 | 主分类号 | H01L21/308 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A hardmask composition comprising: a 2-dimensional carbon nanostructure precursor, a content of the oxygen in the 2-dimensional carbon nanostructure precursor being lower than about 0.01 atom % and greater than or equal to about 0 atom %, or a content of the oxygen in the 2-dimensional carbon nanostructure precursor is greater than about 40 atom % and less than or equal to about 80 atom %; and a solvent, wherein the 2-dimensional carbon nanostructure precursor is one of expanded graphite obtained from exfoliated graphite and an oxidation product of acid-treated graphite. | ||
| 地址 | Gyeonggi-do KR | ||