Supercritical drying method for semiconductor substrate and supercritical drying apparatus

摘要

A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

主权项

1. A supercritical drying apparatus comprising:
a chamber housing a semiconductor substrate and being hermetically sealable; a heater heating an inside of the chamber; a first pipe supplying carbon dioxide to the chamber; a second pipe discharging the carbon dioxide from the chamber; a third pipe supplying an oxygen gas or an ozone gas to the chamber; a controller that:
controls the heater to reach a first predefined temperature inside the chamber;supplies oxygen to the chamber responsive to the chamber reaching a predetermined pressure; andcontrols the heater so that a temperature inside the chamber is increased to a temperature equal to or more than a thermodecomposition temperature or a boiling point of an organic component contained in the carbon dioxide remaining inside the chamber after the semiconductor substrate is impregnated to a supercritical fluid of the carbon dioxide and then the supercritical fluid is discharged.