| 发明名称 | Method of trimming resist pattern | ||
| 摘要 | A method of trimming a resist pattern, including forming a positive resist film on a substrate, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern having an alkali-insoluble region on the surface thereof; applying a resist trimming composition including an acid to the substrate on which the first resist pattern is formed; a heating the first resist pattern coated with the resist trimming composition, and the solubility of the first resist pattern in a developing solution is changed under action of the acid included in the resist trimming composition; and developing the first resist pattern after heating with an organic solvent to remove the alkali-insoluble region of the first resist pattern, the resist trimming composition including the acid and a solvent which does not dissolve the first resist pattern. | ||
| 申请公布号 | US9581909(B2) | 申请公布日期 | 2017.02.28 |
| 申请号 | US201514875458 | 申请日期 | 2015.10.05 |
| 申请人 | TOKYO OHKA KOGYO CO., LTD. | 发明人 | Tsunoda Rikita;Watanabe Ryoji;Hori Yoichi |
| 分类号 | G03F7/30;G03F7/40;G03F7/20;G03F7/32;H01L21/027 | 主分类号 | G03F7/30 |
| 代理机构 | Knobbe Martens Olson & Bear LLP | 代理人 | Knobbe Martens Olson & Bear LLP |
| 主权项 | 1. A method of trimming a resist pattern, comprising: a step A in which a positive resist film is formed on a substrate, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern having an alkali-insoluble region on the surface thereof; a step B in which a resist trimming composition including an acid component is applied to the substrate whereon the first resist pattern is formed; a step B1 in which the resist trimming composition present at an upper portion of the first resist pattern is removed; a step C in which the first resist pattern coated with the resist trimming composition is heated and the solubility of the first resist pattern in a developing solution is changed under action of acid derived from the acid component included in the resist trimming composition; and a step D in which the first resist pattern after heating is developed with an organic solvent to remove the alkali-insoluble region of the first resist pattern,wherein the resist trimming composition comprises the acid component and a solvent which does not dissolve the first resist pattern. | ||
| 地址 | Kawasaki-Shi JP | ||