发明名称 |
METHOD FOR REMOVING A METAL DEPOSIT PLACED ON A SURFACE IN A CHAMBER |
摘要 |
The invention relates to a method for removing a metal deposit placed on a surface in a chamber. Said method includes the following steps: a) a step of oxidizing the metal deposit; b) a step of injecting chemical species that are suitable for volatilizing the oxidized metal deposit, said Step b) being at least partially implemented during Step a). Said removal method is characterized in that, in Step b), the chemical species are injected according to a sequence of pulses. |
申请公布号 |
SG11201700560Q(A) |
申请公布日期 |
2017.02.27 |
申请号 |
SG11201700560Q |
申请日期 |
2015.07.24 |
申请人 |
UNITY SEMICONDUCTOR |
发明人 |
VITIELLO, JULIEN;DELCARRI, JEAN-LUC;PIALLAT, FABIEN |
分类号 |
C23C16/44;B08B7/00;C07C45/00;C23C14/56;C23F1/12;C23G5/00;H01J37/32;H01L21/67 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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