发明名称 METHOD FOR REMOVING A METAL DEPOSIT PLACED ON A SURFACE IN A CHAMBER
摘要 The invention relates to a method for removing a metal deposit placed on a surface in a chamber. Said method includes the following steps: a) a step of oxidizing the metal deposit; b) a step of injecting chemical species that are suitable for volatilizing the oxidized metal deposit, said Step b) being at least partially implemented during Step a). Said removal method is characterized in that, in Step b), the chemical species are injected according to a sequence of pulses.
申请公布号 SG11201700560Q(A) 申请公布日期 2017.02.27
申请号 SG11201700560Q 申请日期 2015.07.24
申请人 UNITY SEMICONDUCTOR 发明人 VITIELLO, JULIEN;DELCARRI, JEAN-LUC;PIALLAT, FABIEN
分类号 C23C16/44;B08B7/00;C07C45/00;C23C14/56;C23F1/12;C23G5/00;H01J37/32;H01L21/67 主分类号 C23C16/44
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