COMPOSITION FOR FORMING RESIST UNDERLAYER INCLUDING SILICON AND HAVING ORGANIC GROUP CONTAINING ALIPHATIC POLYCYCLIC STRUCTURE

摘要

[Problem] To provide a resist underlayer capable of forming excellent resist patterns when an upper resist is exposed and then developed by using an alkaline developing solution or an organic solvent, and a composition for forming the same. [Solution] Provided is a composition for forming a resist underlayer for lithography having an aliphatic polycyclic structure, comprising as silane a hydrolysable silane, a hydrolysate thereof, a hydrocondensate thereof or a combination thereof. The aliphatic polycyclic structure is a structure of the hydrolysable silane represented by formula (1) (In formula (1), R1 includes an aliphatic polycyclic structure and is an organic group combined with an Si atom in an Si-C bonding, R3 represents an ethoxy group, a represents an integer of 1, b represents an integer of 0 to 2, and a+b represents an integer of 1-3), or a structure included in a compound added as an aliphatic polycyclic compound, an aliphatic polycyclic dicarboxylic acid, or an aliphatic polycyclic dicarboxylic acid anhydride, which may include a double bond, a hydroxyl group, or an epoxy group.