发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator. |
申请公布号 |
SG10201605337U(A) |
申请公布日期 |
2017.02.27 |
申请号 |
SG10201605337U |
申请日期 |
2016.06.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YUTA ENDO;HIDEOMI SUZAWA;SACHIAKI TEZUKA;TETSUHIRO TANAKA;TOSHIYA ENDO;MITSUHIRO ICHIJO |
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