| 摘要 |
The invention concerns a memory device comprising: a memory cell having at least one resistive memory element (202) with first, second and third terminals (A, B, C), a resistance between the third terminal (C) and one or both of the first and second terminals being programmable to have one of at least two resistive states (Rmin, Rmax); and control circuitry (204) adapted: during a write phase of the resistive memory element, to program the resistive state by driving a current between the first and second terminals; and during a read phase of the resistive memory element, to apply a voltage between the third terminal and at least one of the first and second terminals to generate a current through the first resistive memory element that is proportional to the programmed resistive state. |
