| 摘要 |
The interconnect structure has a damascene structure with a via (32) or trench (34) in a dielectric layer (30). A conductor whose top surface is lower than the top surface of the dielectric layer, is filled the via or trench. A cobalt-comprising cap having metal cobalt (Co), cobalt tungsten (CoW), cobalt tungsten phosphide (CoWP) or cobalt tungsten boride (CoWB), on the conductor. An independent claim is included for method for fabricating interconnect structure. |
