TRENCH LINER FOR REMOVING IMPURITIES IN A NON-COPPER TRENCH

摘要

The present disclosure involves a method of fabricating a semiconductor device in a semiconductor technology node that is 5-nanometer or smaller. An opening is formed that extends through a plurality of layers over a substrate. A barrier layer is formed on surfaces of the opening. A liner layer is formed over the barrier layer in the opening. The barrier layer and the liner layer have different material compositions. The opening is filled with a non-copper metal material. The non-copper material is formed over the liner layer. In some embodiments, the non-copper metal material includes cobalt.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming an opening that extends through a plurality of layers over a substrate; forming a barrier layer on surfaces of the opening; forming a liner layer over the barrier layer in the opening, wherein the barrier layer and the liner layer have different material compositions, and wherein the liner layer contains a material that is configured to serve as a catalyst in a hydroformylation catalysis chemical reaction; and filling the opening with a non-copper metal material, wherein the non-copper material is formed over the liner layer; wherein the forming the liner layer comprises configuring a material composition of the liner layer such that, when the non-copper metal material is in physical contact with the liner layer during the filling of the opening, impurities from the non-copper metal material are removed.