THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

Provided are a thin film transistor and manufacturing method thereof. The thin film transistor (200) comprises: a gate (21) formed on a substrate (20); an insulation layer (23) formed on the gate (21); a semiconductor layer (25) formed on the insulation layer (23); and a source (27) and a drain (29) formed on the semiconductor layer (25). The source (27) and drain (29) are at two ends of the semiconductor layer (25) and connected thereto. The insulation layer (23) comprises a first insulation layer (231) and second insulation layer (232), and the second insulation layer (232) is disposed between the first insulation layer (231) and the semiconductor layer (25). The above thin film transistor and a manufacturing method thereof improve interface properties and also repair interface defects of the semiconductor layer by employing the insulation layer having a two-layer structure, thus improving the performance of the thin film transistor.