发明名称 |
III-N SEMICONDUCTOR LAYER ON Si SUBSTRATE |
摘要 |
A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride. |
申请公布号 |
US2017054025(A1) |
申请公布日期 |
2017.02.23 |
申请号 |
US201615251999 |
申请日期 |
2016.08.30 |
申请人 |
Dargis Rytis;Clark Andrew;Pham Nam;Arkun Erdem |
发明人 |
Dargis Rytis;Clark Andrew;Pham Nam;Arkun Erdem |
分类号 |
H01L29/78;H01L29/20;H01L29/04 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Oak Ridge NC US |