Non-Planar Quantum Well Device Having Interfacial Layer and Method of Forming Same

摘要

Techniques are disclosed for forming a non-planar quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure having a substrate (e.g. SiGe or GaAs buffer on silicon), a IV or III-V material barrier layer (e.g., SiGe or GaAs or AlGaAs), and a quantum well layer. A fin structure is formed in the quantum well structure, and an interfacial layer provided over the fin structure. A gate metal can be deposited across the fin structure. Drain/source regions can be formed at respective ends of the fin structure.

主权项

1. A method of forming a non-planar quantum well structure, comprising:
providing a quantum well structure including a substrate and a quantum well layer that includes a channel region; selectively etching the quantum well structure to form a fin structure that is: (a) formed in the quantum well structure, and (b) includes the quantum well layer; providing a dielectric layer over the fin structure; and providing gate metal over the dielectric layer.