Semiconductor Device Including a Vertical PN Junction Between a Body Region and a Drift Region

摘要

A semiconductor device includes a drift region extending from a first surface into a semiconductor portion. A body region between two portions of the drift region forms a first pn junction with the drift region. A source region forms a second pn junction with the body region. The pn junctions include sections perpendicular to the first surface. Gate structures extend into the body regions and include a gate electrode. Field plate structures extend into the drift region and include a field electrode separated from the gate electrode. A gate shielding structure is configured to reduce a capacitive coupling between the gate structures and a backplate electrode directly adjoining a second surface.

主权项

1. A semiconductor device, comprising:
a drift region extending from a first surface into a semiconductor portion; a body region between two portions of the drift region, the body region forming a first pn junction with the drift region; a source region between two portions of the body region, the source region forming a second pn junction with the body region, wherein the first and second pn junctions include sections perpendicular to the first surface; gate structures extending into the body regions and including a gate electrode; field plate structures extending into the drift region and including a field electrode separated from the gate electrode; and a gate shielding structure in a vertical projection of the gate structures and configured to reduce a capacitive coupling between the gate structures and a backplate electrode directly adjoining a second surface opposite to the first surface.