MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

Provided is a method for manufacturing a semiconductor device that improves the reliability of the semiconductor device. An opening is formed in an insulating film formed over a semiconductor substrate. At that time, a mask layer for formation of the opening is formed over the insulating film. The insulating film is dry etched and then wet etched. The dry etching step is finished before the semiconductor substrate is exposed at the bottom of the opening, and the wet etching step is finished after the semiconductor substrate is exposed at the bottom of the opening.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
(a) providing a semiconductor substrate; (b) forming an insulating film over the semiconductor substrate; and (c) forming an opening in the insulating film, wherein the step (c) comprises the steps of: (c1) forming a mask layer for formation of the opening, over the insulating film; (c2) after the step (c1), dry etching the insulating film; (c3) after the step (c2), wet etching the insulating film; and (c4) after the step (c3), removing the mask layer, wherein the step (c2) is finished before the semiconductor substrate is exposed at a bottom of the opening, and wherein the step (c3) is finished after the semiconductor substrate is exposed at the bottom of the opening.