发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
A semiconductor memory solves performance degradation of a memory device caused by performance of memory functions different depending on a position of a memory cell array. In the memory cell array including memory cells in each of which a memory element is electrically connected to one of a source and a drain of a cell transistor, the cell transistor includes at least two types with different current driving capability according to a position in the memory cell array. |
申请公布号 |
US2017053697(A1) |
申请公布日期 |
2017.02.23 |
申请号 |
US201615346639 |
申请日期 |
2016.11.08 |
申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
KATOU JUNICHI;NAGAI HIROYASU |
分类号 |
G11C13/00;H01L23/528;H01L27/02;H01L27/24 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor storage device comprising a memory cell array,
the memory cell array comprising memory cells, each of the memory cells comprising: a memory element; and a cell transistor, one of a source and a drain of the cell transistor being electrically connected to the memory element, wherein the cell transistor includes at least two types of cell transistors with different current driving capability according to a position in the memory cell array. |
地址 |
Osaka JP |