SEMICONDUCTOR MEMORY DEVICE, METHOD FOR DESIGNING SEMICONDUCTOR MEMORY DEVICE, AND RECORDING MEDIUM HAVING DESIGNING METHOD RECORDED THEREIN

摘要

According to one embodiment, a semiconductor memory device includes a core section, a corner area adjacent section, a first circuit block and a second circuit block, and multiple wiring layers. The corner area adjacent section is arranged adjacently to a corner area positioned in a corner of the core section adjacently to the sense amplifier and the row decoder. The multiple wiring layers are provided in each of the first circuit block and the second circuit block, wherein a first wire in one of the multiple wiring layers in the first circuit block is arranged parallel to a second wire included in a wiring layer in the second circuit block which is the same as the wiring layer of the first wire.

主权项

1. A semiconductor memory device comprising:
a core section comprising a memory cell array, a sense amplifier adjacent to the memory cell array in a first direction, and a row decoder adjacent to the memory cell array in a second direction; a corner area adjacent section arranged adjacently to a corner area positioned in a corner of the core section adjacently to the sense amplifier and the row decoder, the corner area adjacent section being arranged opposite to the row decoder across the corner area; a first circuit block and a second circuit block provided in the corner area adjacent section to control the core section; and multiple wiring layers provided in each of the first circuit block and the second circuit block, wherein a first wire in one of the multiple wiring layers in the first circuit block is arranged parallel to a second wire included in a wiring layer in the second circuit block which is the same as the wiring layer of the first wire.