A thin film transistor is deposited over a portion of a metal layer over a substrate. A memory element is coupled to the thin film transistor to provide a first memory cell. A second memory cell is over the first memory. A logic block is coupled to at least the first memory cell.
申请公布号
WO2016209218(A8)
申请公布日期
2017.02.23
申请号
WO2015US37237
申请日期
2015.06.23
申请人
INTEL CORPORATION
发明人
KARPOV, Elijah V. (Ilya);KAVALIEROS, Jack T.;CHAU, Robert S.;MUKHERJEE, Niloy;RIOS, Rafael;MAJHI, Prashant;LE, Van H.;PILLARISETTY, Ravi;SHAH, Uday;DEWEY, Gilbert;RADOSAVLJEVIC, Marko
