发明名称 METROLOGY METHOD AND APPARATUS, SUBSTRATES FOR USE IN SUCH METHODS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD
摘要 A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.
申请公布号 US2017052454(A1) 申请公布日期 2017.02.23
申请号 US201615240781 申请日期 2016.08.18
申请人 ASML NETHERLANDS B.V. 发明人 JAK Martin Jacobus Johan;SMILDE Hendrik Jan Hidde;HUANG Te-Chih;CALADO Victor Emanuel;VAN BUEL Henricus Wilhelmus Maria;VAN HAREN Richard Johannes Franciscus
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A method of measuring a parameter of a lithographic process, the method comprising: illuminating a plurality of target structures of a target formed by a lithographic process on a substrate, each target structure comprising overlaid periodic structures and each having a known overlay bias, and detecting radiation scattered by each target structure to obtain for that target structure a measurement representing an overall asymmetry that includes contributions due to (i) the known overlay bias, (ii) overlay performance of the lithographic process, and (iii) feature asymmetry within one or more of the periodic structures; and using the overall asymmetry measurements for a plurality of target structures to calculate a measure of the overlay error, the calculation being performed using the known overlay bias values and the overall asymmetry measurements, wherein each of the overall asymmetry measurements is weighted by a corresponding weight factor, each one of the weight factors representing a measure of feature asymmetry within the respective one or more periodic structures.
地址 Veldhoven NL