| 发明名称 |
GE(II)-CONTAINING PRECURSOR COMPOSITION AND METHOD FOR FORMING GERMANIUM-CONTAINING FILM USING PRECURSOR COMPOSITION |
| 摘要 |
The present invention relates to a precursor composition for depositing a Ge(II)-containing film, the precursor composition comprising a Ge2+-containing precursor compound, and to a method for forming a Ge-containing film, the method comprising vapor deposition using the precursor composition. |
| 申请公布号 |
WO2017030346(A1) |
申请公布日期 |
2017.02.23 |
| 申请号 |
WO2016KR08986 |
申请日期 |
2016.08.16 |
| 申请人 |
UP CHEMICAL CO., LTD. |
发明人 |
HAN, Won Seok;KIM, Dae-Young |
| 分类号 |
H01L27/12;C07F7/30;C23C16/30;H01L21/02;H01L21/205 |
主分类号 |
H01L27/12 |
| 代理机构 |
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