| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
Provided is a semiconductor memory device. The semiconductor memory device includes: a memory cell; a sensing circuit connected to the memory cell via a first bit line and a second bit line different from the first bit line, the sensing circuit configured to sense data stored in the memory cell; and a bit line voltage control circuit connected to the memory cell via the first bit line and the second bit line, the bit line voltage control circuit configured to precharge the first bit line to a first voltage that is lower than a supply voltage and to precharge the second bit line to a second voltage that is lower than the supply voltage and is different from the first voltage. |
| 申请公布号 |
US2017053696(A1) |
申请公布日期 |
2017.02.23 |
| 申请号 |
US201615221875 |
申请日期 |
2016.07.28 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG Han-Wool;RIM Woo-Jin;SONG Tae-Joong;JUNG Seong-Ook;KIM Gyu-Hong |
| 分类号 |
G11C11/419 |
主分类号 |
G11C11/419 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a memory cell; a sensing circuit connected to the memory cell via a first bit line and a second bit line different from the first bit line, the sensing circuit configured to sense data stored in the memory cell; and a bit line voltage control circuit connected to the memory cell via the first bit line and the second bit line, the bit line voltage control circuit configured to precharge the first bit line to a first voltage that is lower than a supply voltage and to precharge the second bit line to a second voltage that is lower than the supply voltage and is different from the first voltage. |
| 地址 |
Suwon-si KR |
