METHOD AND SYSTEM FOR INSPECTING AN EUV MASK

摘要

A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

主权项

1. A method for inspecting an EUV mask by using a charged particle beam, wherein the EUV mask comprises a reflective surface, and the reflective surface comprises a patterned reflective surface area and a peripheral area, the method comprising:
grounding the EUV mask via the peripheral area, wherein the peripheral area is electrically connected to the patterned reflective surface area; moving continuously a stage, wherein the stage is for supporting the EUV mask, and simultaneously scanning the patterned reflective surface area of the EUV mask by using the charged particle beam; and receiving signal electrons emanated from the patterned reflective surface area of the EUV mask.