TECHNIQUES FOR LOW TEMPERATURE DIRECT GRAPHENE GROWTH ON GLASS

摘要

Certain example embodiments relate to methods for low temperature direct graphene growth on glass, and/or associated articles/devices. In certain example embodiments, a glass substrate has a layer including Ni formed thereon. The layer including Ni has a stress pre-engineered through the implantation of He therein. It also may be preconditioned via annealing and/or the like. A remote plasma-assisted chemical vapor deposition technique is used to form graphene both above and below the Ni-inclusive film. The Ni-inclusive film and the top graphene may be removed via tape and/or the like, leaving graphene on the substrate. Optionally, a silicon-inclusive layer may be formed between the Ni-inclusive layer and the substrate. Products including such articles, and/or methods of making the same, also are contemplated.

主权项

1. A method of making a coated article including a graphene-inclusive thin film supported by a glass substrate, the method comprising:
forming a layer comprising Si on the substrate; forming a layer comprising Ni on the layer comprising Si; engineering stress in the layer comprising Ni via He ion implantation and annealing; following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni via plasma-related chemical vapor deposition; and mechanically removing the layer comprising Ni and the graphene on the major surface of the layer comprising Ni opposite the substrate, at least some of the graphene initially formed at the interface of the layer comprising Si and the layer comprising Ni remaining on the substrate on the layer comprising Si following the mechanical removal, in making the graphene-inclusive thin film.