发明名称 |
Phase hysteretic magnetic Josephson junction memory cell |
摘要 |
One embodiment describes a memory cell. The memory cell includes a phase hysteretic magnetic Josephson junction (PHMJJ) that is configured to store one of a first binary logic state corresponding to a binary logic-1 state and a second binary logic state corresponding to a binary logic-0 state in response to a write current and to generate a superconducting phase based on the stored digital state. The memory cell also includes at least one Josephson junction having a critical current that is based on the superconducting phase of the PHMJJ and being configured to provide an output corresponding to the stored digital state in response to a read current. |
申请公布号 |
AU2014329991(B2) |
申请公布日期 |
2017.02.23 |
申请号 |
AU20140329991 |
申请日期 |
2014.07.16 |
申请人 |
Northrop Grumman Systems Corporation |
发明人 |
Herr, Anna Y.;Herr, Quentin P.;Naaman, Ofer |
分类号 |
G11C11/44;B82Y10/00;G01R33/035;G06N99/00;H01L27/18;H01L39/02;H01L39/22;H01L39/24;H03K3/38 |
主分类号 |
G11C11/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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