SEMICONDUCTOR DEVICE WITH IMPROVED SENSE MARGIN OF SENSE AMPLIFIER

摘要

Semiconductor devices capable of a sensing margin of a semiconductor device are described. A semiconductor device may include a plurality of mats, a plurality of sensing circuits, a plurality of connecting circuits, and a plurality of mat dividing circuits. The mats are divided into upper regions and lower regions and activated by word lines. The sensing circuits are arranged in regions among the plurality of mats and are configured to sense/amplify data applied from the plurality of mats. The connecting circuits are configured to control connections between the mats and the sensing circuits in correspondence to a plurality of bit line selection signals. The mat dividing circuits are configured to selectively connect bit lines of the upper regions and the lower regions to each other in correspondence to a plurality of mat selection signals.

主权项

1. A semiconductor device, comprising:
a plurality of mats divided into upper regions and lower regions and activated by word lines; a plurality of sensing circuits arranged in regions among the plurality of mats, and configured to sense or amplify data applied from the plurality of mats; a plurality of connecting circuits configured to control connections between the plurality of mats and the plurality of sensing circuits in correspondence to a plurality of bit line selection signals; a plurality of mat dividing circuits configured to selectively connect bit lines of the upper regions and the lower regions to each other in correspondence to a plurality of mat selection signals; and a connection control section configured to selectively activate the plurality of bit line selection signals in correspondence to an address applied to an exterior, wherein each of the plurality of sensing circuits is selectively connected to the lower region located above a sense amplifier selected by control of the plurality of connecting circuits and the upper region located below the sense amplifier.