发明名称 PROCESS AND DEVICE FOR MELTING AND FINING GLASS
摘要 The invention relates to a process and a device for manufacturing molten glass comprising from upstream to downstream a furnace for melting and fining glass equipped with cross-fired overhead burners, then a conditioning basin supplied with glass by the furnace, the dimensions of this manufacturing device being such that K is higher than 3.5, the factor K being determined from the dimensions of the device. The invention makes it possible to dimension a device for melting glass so that it is smaller and consumes less energy while producing high quality glass.
申请公布号 US2017050874(A1) 申请公布日期 2017.02.23
申请号 US201515307258 申请日期 2015.04.23
申请人 SAINT-GOBAIN GLASS FRANCE 发明人 MARIO Olivier;LE VERGE Arnaud;COMBES Jean-Marie
分类号 C03B5/04;C03B5/23;C03B18/02 主分类号 C03B5/04
代理机构 代理人
主权项 1. A process for manufacturing molten glass in a device comprising, from upstream to downstream, a furnace far melting and fining glass equipped with cross-fired overhead burners, and then a conditioning basin comprising one or more compartments, the process comprising melting, glass in the furnace, wherein: the furnace comprises a melting zone and a fining zone; the bottom of the fining zone and the bottom of the conditioning basin are deep enough that a single downstream recirculation loop passes through the fining zone and through all the compartments of the conditioning basin; the conditioning basin is supplied with glass by the furnace; and the dimensions of the device are such that K is higher than 3.5, where,K=Ka+∑iKSi, in which:Ka=0.000727×Sf×∫x0x1[P(x)]2[σ(x)]3x; Sf represents the area under flame in the furnace; x0 is the abscissa in the general flow direction of the glass of the end of the area under flame in the furnace; x1 is the abscissa in the general flow direction of the glass of the end of the conditioning basin; σ(x) represents the area of the cross section of flow of the glass of the device at the abscissa x; P(x) represents the perimeter of the cross section of flow of the glass of the device at the abscissa x; and ΣiKSi represents the sum of the KSi due to a singular element in the device downstream of the area under flame in the furnace, a singular element producing, from upstream to downstream and over less than 2 m in the flow direction of the glass, a decrease in the cross section of flow of the glass of more than 10% then an increase in the cross section of flow of the glass of more than 10%, whereKSi=0.0012×(exp[5.16(σi-σSiσi)2.55]-1)(Sfσi)2[[,]]; σi representing the area of the cross section of flow of the glass just upstream of the singular element Si; and σSi representing the area of the minimum cross section of flow produced by the singular element Si.
地址 Courbevoie FR