DOUBLE-SIDE PROCESS SILICON MOS AND PASSIVE DEVICES FOR RF FRONT-END MODULES

摘要

An integrated circuit includes a first semiconductor substrate having a first surface and a second surface opposite to the first surface, at least one first trench extending into the first semiconductor substrate from the first surface and having a first depth, at least one second trench extending into the first semiconductor substrate from the first surface and having a second depth greater than the first depth, a thinned semiconductor region with a first recessed region extending in the first semiconductor substrate from the second surface and having a first thickness, a second recessed region in the first semiconductor substrate extending from the second surface to the first surface, and a bulk dielectric layer covering the second surface of the first semiconductor substrate.

主权项

1. An integrated circuit, comprising:
a first semiconductor substrate having a first surface and a second surface that is opposite to the first surface; one or more first trenches extending into the first semiconductor substrate from the first surface, the first trenches being characterized by a first depth; one or more second trenches extending into the first semiconductor substrate from the first surface, the second trenches being characterized by a second depth greater than the first depth; a thinned semiconductor region with a first recessed region extending in the first semiconductor substrate from the second surface, the thinned semiconductor region being characterized by a first thickness; a second recessed region in the first semiconductor substrate extending from the second surface to the first surface; and a bulk dielectric layer covering the second surface of the first semiconductor substrate.