METHODS FOR FORMING FIN STRUCTURES

摘要

A method includes providing a substrate having a first and a second plurality of fins with a first at least one dielectric material disposed thereon, removing upper portions of the first dielectric material to expose upper portions of the first and the second plurality of fins, removing the first dielectric material from the lower portions of the second plurality of fins to expose lower portions of the second plurality of fins, depositing a second at least one dielectric material on at least the upper and the lower exposed portions of the second plurality of fins and on the upper exposed portions of first plurality of fins, removing the second dielectric material to expose upper portions of the first and the second plurality of fins, and wherein the first dielectric material is different from the second dielectric material. The resulting structure may be operable for use as nFETs and pFETs.

主权项

1. A method for forming an intermediate semiconductor structure, the method comprising:
providing a substrate having a first and a second plurality of fins with a first at least one dielectric material disposed thereon; removing upper portions of the first at least one dielectric material to expose upper portions of the first and the second plurality of fins; removing the first at least one dielectric material from the lower portions of the second plurality of fins to expose lower portions of the second plurality of fins; depositing a second at least one dielectric material on at least the upper and the lower exposed portions of the second plurality of fins and on the upper exposed portions of first plurality of fins; removing the second at least one dielectric material to expose upper portions of the first and the second plurality of fins; and wherein the first at least one dielectric material is different from the second at least one dielectric material.