Etching Apparatus

摘要

A system and method of etching a semiconductor device are provided. Etching solution is sampled and analyzed by a monitoring unit to determine a concentration of components within the etching solution, such as an oxidant concentration. Then, based upon such measurement, a makeup amount of the components may be added be a makeup unit to the etching solution to control the concentration of the components within the etching system.

主权项

1. A method of etching a semiconductor device, the method comprising:
removing a sample from an etching solution; analyzing the sample to determine a concentration of an oxidant within the sample; introducing a makeup amount of the oxidant into the etching solution based upon the concentration of the oxidant from analyzing the sample; and etching a semiconductor substrate with the etching solution to form a etched surface, wherein after the etching the semiconductor substrate the etched surface is free from hillocks.