发明名称 |
Integrated Structures |
摘要 |
Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. Vertically-extending monolithic channel material is adjacent the select device gate material and the conductive levels. The monolithic channel material contains a lower segment adjacent the select device gate material and an upper segment adjacent the conductive levels. A first vertically-extending region is between the lower segment of the monolithic channel material and the select device gate material. The first vertically-extending region contains a first material. A second vertically-extending region is between the upper segment of the monolithic channel material and the conductive levels. The second vertically-extending region contains a material which is different in composition from the first material. |
申请公布号 |
US2017054036(A1) |
申请公布日期 |
2017.02.23 |
申请号 |
US201514830517 |
申请日期 |
2015.08.19 |
申请人 |
Micron Technology, Inc. |
发明人 |
Dorhout Justin B.;Daycock David;Parekh Kunal R.;Roberts Martin C.;Hu Yushi |
分类号 |
H01L29/792;H01L29/423;H01L27/115 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated structure, comprising:
a conductive line configured of metal-containing material; a select device gate material over the conductive line and spaced from the conductive line by an insulative material; vertically-stacked conductive levels over the select device gate material; vertically-extending monolithic channel material adjacent the select device gate material and the conductive levels; the vertically-extending monolithic channel material containing a lower segment adjacent the select device gate material and an upper segment adjacent the conductive levels; the vertically-extending monolithic channel material being electrically coupled with the conductive line; a first vertically-extending region between the lower segment of the vertically-extending monolithic channel material and the select device gate material; the first vertically-extending region comprising a first material; and a second vertically-extending region between the upper segment of the vertically-extending monolithic channel material and the conductive levels; the second vertically-extending region comprising a vertically-extending material which is different in composition from the first material. |
地址 |
Boise ID US |