RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL

摘要

A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0×10−28 m3.

主权项

1. A resist-pattern-forming method comprising:
patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm; floodwise exposing the resist material film patternwise exposed, to a second radioactive ray that is nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm; baking the resist material film floodwise exposed; and developing the resist material film baked with a developer solution to form a resist pattern, the chemically amplified resist material comprising: a base component that is capable of being made soluble or insoluble in the developer solution by an action of an acid; and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure, wherein the generative component comprises: a radiation-sensitive acid-and-sensitizer generating agent; any two among the radiation-sensitive acid-and-sensitizer generating agent, a radiation-sensitive sensitizer generating agent, and a radiation-sensitive acid generating agent; or the radiation-sensitive acid-and-sensitizer generating agent, the radiation-sensitive sensitizer generating agent, and the radiation-sensitive acid generating agent, wherein the radiation-sensitive acid-and-sensitizer generating agent generates, upon the exposure to the first radioactive ray, an acid, and a radiation-sensitive sensitizer absorbing the second radioactive ray, and substantially does not generate the acid and the radiation-sensitive sensitizer upon the exposure to the second radioactive ray, in light-unexposed regions that are not exposed to the first radioactive ray in the patternwise exposing, the radiation-sensitive sensitizer generating agent generates, upon the exposure to the first radioactive ray, a radiation-sensitive sensitizer absorbing the second radioactive ray, and substantially does not generate the radiation-sensitive sensitizer upon the exposure to the second radioactive ray, in light-unexposed regions that are not exposed to the first radioactive ray in the patternwise exposing, and the radiation-sensitive acid generating agent generates an acid upon the exposure to the first radioactive ray, and substantially does not generate the acid upon the exposure to the second radioactive ray, in light-unexposed regions that are not exposed to the first radioactive ray in the patternwise exposing, wherein a van der Waals volume of an acid generated from the generative component is no less than 3.0×10−28 m3.