| 发明名称 |
METHOD FOR MANUFACTURING P-TYPE ZINC OXIDE FILM |
| 摘要 |
There is provided a production method which enables stable formation of a p-type zinc oxide film and also is suitable for enlarging the area of the film. The method for producing a p-type zinc oxide film according to the present invention comprises the steps of: placing a target containing a zinc source and a substrate in a gas atmosphere containing a nitrogen source and an oxygen source and having a gas pressure of 0.1 Pa to 100 Pa, and exposing the target to arc discharge, thereby forming a precursor film containing zinc and oxygen on the substrate; and annealing the precursor film in an oxidizing atmosphere, thereby forming a p-type zinc oxide film. |
| 申请公布号 |
US2017053801(A1) |
申请公布日期 |
2017.02.23 |
| 申请号 |
US201615346831 |
申请日期 |
2016.11.09 |
| 申请人 |
NAGOYA INSTITUTE OF TECHNOLOGY ;NGK INSULATORS, LTD. |
发明人 |
TANEMURA Masaki;WATANABE Morimichi;YOSHIKAWA Jun;NANATAKI Tsutomu |
| 分类号 |
H01L21/02;H01J37/32;C23C14/58;C23C14/22;C23C14/08 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing a p-type zinc oxide film, comprising the steps of:
placing a target containing a zinc source and a substrate in a gas atmosphere containing a nitrogen source and an oxygen source and having a gas pressure of 0.1 Pa to 100 Pa, and exposing the target to arc discharge, thereby forming a precursor film containing zinc and oxygen on the substrate; and annealing the precursor film in an oxidizing atmosphere, thereby forming a p-type zinc oxide film. |
| 地址 |
Nagoya-Shi JP |
