SEMICONDUCTOR DEVICE

摘要

It is aimed to reduce a current concentration at the edge of the contact electrode.;Provided is a semiconductor device including a semiconductor layer, a first trench electrode formed in the semiconductor layer on a front surface side thereof, and a second trench electrode formed in the semiconductor layer on the front surface side thereof so as to oppose the first trench electrode. Here, the first trench electrode is formed in a mesh-like pattern. The semiconductor layer may further include a first-conductivity-type region and a second-conductivity-type region having a different conductivity type than the first-conductivity-type region. The first trench electrode may be electrically connected to the first-conductivity-type region, and the second trench electrode may be electrically connected to the second-conductivity-type region.

主权项

1. A semiconductor device comprising:
a semiconductor layer; a first trench electrode formed in the semiconductor layer on a front surface side thereof; and a second trench electrode formed in the semiconductor layer on the front surface side thereof, the second trench electrode opposing the first trench electrode, wherein the first trench electrode is formed in a mesh-like pattern.