发明名称 IMAGE SENSOR WITH TRENCHED FILLER GRID
摘要 Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. A filler grid is formed over the photodiode array, such as over a dielectric grid. The filler grid comprises one or more filler structures, such as a first filler structure that provides a light propagation path to a first photodiode that is primarily through the first filler structure. In this way, signal strength decay of light along the light propagation path before detection by the first photodiode is mitigated. The image sensor comprises a reflective layer that channels light towards corresponding photodiodes. For example, a first reflective layer portion guides light towards the first photodiode and away from a second photodiode. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.
申请公布号 US2017053959(A1) 申请公布日期 2017.02.23
申请号 US201615345311 申请日期 2016.11.07
申请人 Taiwan Semiconductor Manufacturing Company Limited 发明人 Hsieh Feng-Chien;Jeng Chi-Cherng;Hsin-Chi Chen;Huang Shih-Ciang;Chun-Ying Wang;Chen Volume;Liu Zhe-Ju
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. An image sensor, comprising: a first photodiode; a dielectric grid comprising a first dielectric structure and a second dielectric structure; a reflective layer having a bottom surface in direct physical contact with a top surface of the first dielectric structure; a color filter material over the first photodiode and having a sidewall in direct physical contact with a sidewall of the reflective layer; and a lens structure in direct physical contact with the color filter material.
地址 Hsin-Chu TW