One-Time Programmable Memory and Method for Making the Same

摘要

A one time programmable nonvolatile memory formed from metal-insulator semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting lines formed in a semiconductor substrate. Among others, features include forming the gate lines with polysilicon layers of one conductivity type and the intersecting lines with dopants of the opposite conductivity type in the substrate; forming the intersecting lines with differing dopant concentrations near the substrate surface and deeper in the substrate; and forming the widths of the gate lines and intersecting lines with the minimum feature size that can be patterned by a particular semiconductor technology.

主权项

1. A memory cell, the memory cell being programmable and non-volatile, comprising:
a channel region disposed in a substrate; a dielectric layer disposed over the channel region; a gate layer disposed over the dielectric layer; a bitline disposed in a horizontal direction in the substrate; a wordline disposed in a vertical direction in the substrate.