BAW RESONATOR HAVING MULTI-LAYER ELECTRODE AND BO RING CLOSE TO PIEZOELECTRIC LAYER

摘要

Embodiments of a Bulk Acoustic Wave (BAW) resonator having a high quality factor (Q) and methods of fabrication thereof are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, and a second multi-layer electrode on a second surface of the piezoelectric layer opposite the first electrode on the first surface of the piezoelectric layer. In addition, the BAW resonator includes a Border (BO) ring positioned within the second multi-layer electrode around a periphery of an active region of the BAW resonator. The BO ring is either at a position within the second multi-layer electrode between two adjacent layers of the second multi-layer electrode or at a position within the second multi-layer electrode that is adjacent to the piezoelectric layer. In this manner, the quality factor (Q) of the BAW resonator is improved.

主权项

1. A Bulk Acoustic Wave (BAW) resonator, comprising:
a piezoelectric layer; a first electrode on a first surface of the piezoelectric layer; a second multi-layer electrode on a second surface of the piezoelectric layer opposite the first electrode on the first surface of the piezoelectric layer; and a Border (BO) ring positioned within the second multi-layer electrode around a periphery of an active region of the BAW resonator, the BO ring being at a position within the second multi-layer electrode selected from a group consisting of: a position between two adjacent layers of the second multi-layer electrode and a position within the second multi-layer electrode that is adjacent to the piezoelectric layer.